Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology
Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology
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DOI：
10.1109/23.819163
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发表时间：
1999-12
影响因子：
1.8
通讯作者：
G. Niu;S. Mathew;Gaurab Banerjee;J. Cressler;S. Clark;M. Palmer;S. Subbanna
中科院分区：
文献类型：
--
作者：
G. Niu;S. Mathew;Gaurab Banerjee;J. Cressler;S. Clark;M. Palmer;S. Subbanna
首次研究了辐照对SiGe BiCMOS工艺中浅槽隔离(STI)漏电流的影响，发现辐照栅偏压和工作衬底偏压对STI漏电流有很强的依赖关系。正的辐照栅极偏压显著地增强了STI的泄漏，这表明STI中的电荷积累过程具有强场辅助的性质。数值模拟还表明，在STI/Si界面的大块深处存在固定的正电荷。然而，负的衬底偏压有效地抑制了STI泄漏，并且可以用来消除由体深处的电荷在辐照下产生的泄漏。
The effects of gamma irradiation on the shallow-trench isolation (STI) leakage currents in a SiGe BiCMOS technology are investigated for the first time, and shown to be strongly dependent on the irradiation gate bias and operating substrate bias. A positive irradiation gate bias significantly enhances the STI leakage, suggesting a strong field assisted nature of the charge buildup process in the STI. Numerical simulations also suggest the existence of fixed positive charges deep in the bulk along the STI/Si interface. A negative substrate bias, however, effectively suppresses the STI leakage, and can be used to eliminate the leakage produced by the charges deep in the bulk under irradiation.