Fast response ultraviolet Ga-doped ZnO based photoconductive detector
Fast response ultraviolet Ga-doped ZnO based photoconductive detector
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DOI：
10.1016/j.materresbull.2011.05.032
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发表时间：
2011-10
影响因子：
5.4
通讯作者：
S. Shinde;K. Rajpure
中科院分区：
文献类型：
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作者：
S. Shinde;K. Rajpure
采用喷雾热解法在氧化铝衬底上外延生长了高质量的掺镓氧化锌薄膜，制备了金属-半导体-金属光导探测器。在超过两个数量级的范围内，光电流随入射功率密度线性增加。采用反射率和光电流测量方法研究了掺镓氧化锌薄膜的光电性质。这两种光谱是一致的，在紫外区比可见光区有更好的响应。在偏压为5V时，在紫外区获得了约1187A/W的峰值响应率。
A metal–semiconductor–metal photoconductive detector was fabricated using high quality Ga-doped ZnO film epitaxially grown onto alumina substrate by spray pyrolysis. The photocurrent increases linearly with incident power density for more than two orders of magnitude. Reflectance and photocurrent measurements were carried out to study optoelectronic properties of Ga-doped ZnO thin film. Both spectra are consistent with each other showing good response in UV than visible region. Peak responsivity of about 1187A/W at 5V bias for 365nm light was obtained in UV region.