Terahertz photoresponse of AlInSb/InSb/AlInSb quantum well structures
Terahertz photoresponse of AlInSb/InSb/AlInSb quantum well structures
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DOI：
10.1103/physrevb.81.155304
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发表时间：
2010-04
影响因子：
3.7
通讯作者：
F. Gouider;Y. Vasilyev;M. Bugár;J. Könemann;P. Buckle;G. Nachtwei
中科院分区：
文献类型：
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作者：
F. Gouider;Y. Vasilyev;M. Bugár;J. Könemann;P. Buckle;G. Nachtwei
我们研究了具有InSb量子阱（AlInSb势垒）结构的光响应（corbino形器件的透射和光电导率）。为了对器件进行表征，测量了7 T磁场下的舒布尼科夫-德哈斯（SdH）效应和不同磁场下的电流-电压（I-V）特性。一些样品显示出明显可分辨的SdH振荡。I-V曲线表现出明显的非线性。在p-Ge激光器产生的2.5太赫兹（THz）附近测量了不同太赫兹（THz）频率下的光透射率和光电导率。从回旋加速器共振（透射测量）我们推断回旋加速器质量为0.022m0。我们还在太赫兹频率范围内对corbino形器件进行了光电导率测量。在黑暗中观察到光电导率的振荡，其最大值接近电导率的最小值。因此，这些装置可能适用于太赫兹辐射的探测。
We have studied the photoresponse (transmission and photoconductivity of Corbino-shaped devices) of structures with InSb quantum wells (AlInSb barriers). To characterize the devices, the Shubnikov-de Haas (SdH) effect up to magnetic fields B of 7 T and current-voltage (I-V) characteristics at various magnetic fields were measured. Some of the samples showed clearly resolvable SdH oscillations. The I-V curves showed pronounced nonlinearities. The phototransmission and the photoconductivity at various terahertz (THz) frequencies were measured around 2.5 THz generated by a p-Ge laser. From the cyclotron resonance (transmission measurements) we deduced a cyclotron mass of 0.022m0. We also performed photoconductivity measurements on Corbino-shaped devices in the THz frequency range. Oscillations of the photoconductivity with maxima near the minima of the conductivity in the dark were observed. Thus, these devices are potentially suitable for the detection of THz radiation.