A Study of Self-Interstitial Atom in W by Means of Low-Temperature Irradiations
A Study of Self-Interstitial Atom in W by Means of Low-Temperature Irradiations
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低温辐照研究W中自填隙原子
DOI：
10.1051/jp4:1996861
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
S. Okuda
中科院分区：
文献类型：
--
作者：
H. Tanimoto;H. Mizubayashi;H. Nishimura;S. Okuda
为了阐明W中自填隙原子（SIA's）的迁移行为，我们分别在5 K和1.5 K下对2MeV电子辐照和20MeV质子辐照后的W进行了滞弹性测量。在辐照过程中观察到的位错钉扎结果清楚地表明，自由SIA的W迁移低于1.5 K。辐射后的热身测量揭示了更高的温度钉扎，所有显示没有剂量偏移报告的阶段I的电阻率测量后，低温电子辐照的子阶段，这表明这些钉扎是由于SIA的陷阱释放。根据目前的结果，可以说，游离SIA在难熔BCC金属中的迁移温度一般为。非常低，W中低于1.5K，Nb和Ta中低于6K，但Mo中约为40K。
To clarify the migration behavior of self-interstitial atoms (SIA's) in W, we have performed anelasticity measurements of W after 2 MeV electron irradiation at 5 K and after 20 MeV proton irradiation at 1.5 K. Dislocation pinning results observed during irradiation clearly show that free SIA's in W migrate below 1.5 K. Warm-up measurements after irradiation reveal higher temperature pinnings which all show no dose shift as reported for substages of the stage I in the electrical resistivity measurements after low-temperature electron irradiation, suggesting that these pinnings are due to SIA's released from traps. After the present results, one can say that the migration temperature of free SIA's in the refractory BCC metals is, in general. very low as below 1.5 K in W and below 6 K in Nb and Ta with the exception of about 40 K in Mo.