STM-Induced Desorption and Lithographic Patterning of Cl-Si(100)-(2 x 1)
STM-Induced Desorption and Lithographic Patterning of Cl-Si(100)-(2 x 1)
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DOI：
10.1021/acs.jpca.9b07127
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发表时间：
2019-12-19
影响因子：
2.9
通讯作者：
Butera, R. E.
中科院分区：
文献类型：
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作者：
Dwyer, K. J.;Dreyer, Michael;Butera, R. E.
用扫描隧道显微镜(STM)研究了在4~600K的超高真空条件下，端氯硅单晶(100)-(2×1)表面的针尖诱导氯脱附和光刻图案化。到目前为止，STM光刻只专注于用于施主器件制造的氢基化学。作为开发卤素化学的第一步，我们用氯取代了氢阻抗剂，以制造受主器件的STM。我们发现，氯可以被STM针尖利用电子和空穴注入来选择性地脱附。观察表明，目标氯没有被驱入表面，而是以单个原子和成对原子的形式完全解吸。氯去钝化光刻是使用场发射图形从大面积高效(0.83(1))解吸氯，以及原子精密图形一次解吸一到两行二聚体，产生1.5 nm宽的线条。此外，改变光刻的实验参数发现，图案线宽度与样品正偏压(1.7(2)nm/V)和总电子剂量(0.15(2)nm/(mc/cm))呈正相关，表明电子能量和总电子数在多个位置的脱附中起作用。
A scanning tunneling microscope (STM) was used to investigate tip-induced chlorine desorption and lithographic patterning of Cl-terminated Si(100)-(2 x 1) surfaces from 4 to 600 K in ultrahigh vacuum. Until now, STM lithography has exclusively focused on hydrogen-based chemistry for donor device fabrication. As the initial step in developing halogen-based chemistries for STM fabrication of acceptor-based devices, we substituted the hydrogen resist with chlorine. We found that chlorine can be selectively desorbed by the STM tip using both electron and hole injection. Observations show that targeted chlorine was not driven into the surface but desorbed completely as both individual and pairs of atoms. Chlorine depassivation lithography is demonstrated using both field-emission patterning to desorb chlorine from large areas with high efficiency (0.83(1)) and atomic-precision patterning to desorb one to two dimer rows at a time, resulting in 1.5 nm wide lines. Further, varying the experimental parameters for lithography revealed a positive correlation between pattern line widths and both positive sample bias voltage (1.7(2) nm/V) and total electron dose (0.15(2) nm/(mC/cm)), demonstrating that the energy and total number of electrons play a role in desorption from multiple sites.