Fabrication of In-Doped ZnO Scintillator Mounted on a Vacuum Flange
Fabrication of In-Doped ZnO Scintillator Mounted on a Vacuum Flange
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DOI：
10.1109/tns.2012.2190145
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发表时间：
2012-10-01
影响因子：
1.8
通讯作者：
Fukuda, Tsuguo
中科院分区：
文献类型：
--
作者：
Kano, Masataka;Wakamiya, Akira;Fukuda, Tsuguo
采用水热法生长出高质量的In掺杂ZnO单晶。 <0001>和<000-1>方向的生长速率约为80μm/天。 (0002)反射的X射线摇摆曲线(XRC)半高全宽(FWHM)为24.2角秒。为了能够将该材料用作高空间分辨率软X射线激光原位成像的闪烁体，我们制备了In掺杂ZnO晶片（9.0 mm x 9.0 mm x 0.75 mm）并将其安装在真空法兰上。衰减时间常数评估为120 ps，因此使其成为高空间分辨率软X射线激光原位成像装置的理想闪烁体。此外，具有如此短衰减时间常数的In掺杂ZnO闪烁体适用于泵浦和探测实验中超快、短波长激光源的高精度对准和同步。
High quality In-doped ZnO single crystal was grown using the hydrothermal method. The growth rate for both < 0001 > and < 000-1 > directions is about 80 mu m/day. The X-ray rocking curve (XRC) full width at half maximum (FWHM) of the (0002) reflection is 24.2 arcsec. In order to make it possible to use this material as a scintillator for in situ imaging of soft X-ray laser with high spatial resolution, we prepared an In-doped ZnO wafer (9.0 mm x 9.0 mm x 0.75 mm) and mounted it on a vacuum flange. The decay time constant is evaluated to be 120 ps, therefore making it an ideal scintillator for in situ imaging device of soft X-ray laser with high spatial resolution. Furthermore, In-doped ZnO scintillator with such short decay time constant is suitable for high accuracy alignment and synchronization of ultrafast, short wavelength laser sources for pump-and-probe experiments.