Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers
Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers
复制标题
使用 GaN-on-SiEpilayers 的全垂直 GaN p-i-n 二极管
DOI：
10.1109/led.2016.2548488
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发表时间：
2016-05-01
影响因子：
4.9
通讯作者：
Lau, Kei May
中科院分区：
文献类型：
--
作者：
Zou, Xinbo;Zhang, Xu;Lau, Kei May
Using GaN-on-Si epilayers, for the first time, fully vertical p-i-n diodes are demonstrated after Si substrate removal, transfer, and n-electrode formation at the top of the device. After SiO2 sidewall passivation, the vertical p-i-n diodes, with n-GaN facing up, exhibit V-ON of 3.35 V at 1 A/cm(2), a low differential ON-resistance of 3.3 m Omega cm(2) at 300 A/cm(2), and a breakdown voltage of 350 V. The corresponding Baliga's figure of merit is 37.0 MW/cm(2), a very good value for GaN-based p-i-n rectifiers grown on Si substrates. The results indicate that fully vertical rectifiers using GaN-on-Si epilayers have great potential in achieving cost-effective GaN devices for high-power and high-voltage applications.
