Polycrystalline tetrabenzoporphyrin organic field-effect transistors with nanostructured channels
Polycrystalline tetrabenzoporphyrin organic field-effect transistors with nanostructured channels
复制标题
DOI：
10.1063/1.2745227
复制
发表时间：
2007-06
影响因子：
4
通讯作者：
P. Shea;Charlene Chen;J. Kanicki;Lisa R. Pattison;Pierre M. Petroff;H. Yamada;N. Ono
中科院分区：
文献类型：
--
作者：
P. Shea;Charlene Chen;J. Kanicki;Lisa R. Pattison;Pierre M. Petroff;H. Yamada;N. Ono
采用有机半导体四苯并卟啉（TBP）前驱体形式沉积在具有纳米沟槽的热氧化硅栅绝缘体上，制备了溶液加工的有机薄膜场效应晶体管（ofet）。前驱体膜向TBP的热转化通过TBP在预图像化沟槽中的有序聚集而增强，证明了有机半导体的长程和短程有序的精确控制和放置。研究发现，沟道平行于沟槽方向生长的ofet的场效应迁移率比沟道垂直于树突生长的晶体管高一个数量级。
Solution-processed organic thin-film field-effect transistors (OFETs) were fabricated using a precursor form of the organic semiconductor tetrabenzoporphyrin (TBP) deposited on a thermal silicon oxide gate insulator patterned with nanometer-scale trenches. Thermal conversion of the precursor film to TBP was enhanced by ordered TBP aggregation in the prepatterned trenches, demonstrating precise control and placement of long- and short-range ordering of the organic semiconductor. OFETs with channels parallel to trench direction growth were found to have field-effect mobility approaching one order of magnitude greater than transistors fabricated with the channel oriented perpendicular to dendrimer growth.