Electrochemical field-effect transistors of octathio[8]circulene robust thin films with ionic liquids
Electrochemical field-effect transistors of octathio[8]circulene robust thin films with ionic liquids
复制标题
DOI：
10.1016/j.cplett.2009.10.050
复制
发表时间：
2009-11-24
影响因子：
2.8
通讯作者：
Awaga, Kunio
中科院分区：
文献类型：
--
作者：
Fujimoto, Takuya;Matsushita, Michio M.;Awaga, Kunio
我们制备了一种八硫杂[8]环轮烯（1）薄膜的电化学场效应晶体管（FET），该薄膜沉积在叉指阵列电极上，并使用离子液体（N,N - 二乙基 - N - 甲基（2 - 甲氧基乙基）铵双（三氟甲基磺酰）亚胺）电解质作为栅极介电层来运行它。通过交流法测量源 - 漏电流所获得的FET性能显示出2.4×10⁻² cm²/Vs的高载流子迁移率以及极低功耗运行。导通状态的阈值电位几乎是1的氧化电位的一半。（C）2009爱思唯尔有限公司。保留所有权利。
We fabricated an electrochemical field-effect transistor (FET) of octathio[8]circulene (1) thin-film, deposited on interdigitated array electrodes, and operated it with a gate dielectric layer of an ionic liquid (N,N-diethyl-N-methyl(2-methoxyethyl) ammonium bis(trifluoromethylsulfonyl)imide) electrolyte. The FET performance, obtained by the alternating current method for the source-drain current measurements, revealed a high carrier mobility of 2.4 x 10(-2) cm(2)/Vs and a very low-power operation. The threshold potential for the on-state was nearly half of the oxidation potential of 1. (C) 2009 Elsevier B.V. All rights reserved.