Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal-Organic Chemical Vapor Deposition Grown In2O3 Channel Treated by Oxygen Microwave Plasma
Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal-Organic Chemical Vapor Deposition Grown In2O3 Channel Treated by Oxygen Microwave Plasma
复制标题
氧微波等离子体处理的金属有机化学气相沉积 In2O3 通道超高场效应迁移率薄膜晶体管
DOI：
10.1109/led.2015.2476507
复制
发表时间：
2015-11-01
影响因子：
4.9
通讯作者：
Wang, G.
中科院分区：
文献类型：
--
作者：
Hu, R.;Pei, Y.;Wang, G.
在这封信中，薄膜晶体管（TFT）与金属有机化学气相沉积（MOCVD）制备的氧化铟沟道层进行了演示。通过对In 2 O3沟道进行O-2微波等离子体处理，获得了诸如243 cm（2）/Vs的超高场效应迁移率、10（7）的开/关电流比以及在负偏压光照应力下的高稳定性的高性能，尽管没有观察到典型的电学特性。通过霍尔效应测量、X射线光电子能谱和Kelvin探针力显微镜研究了O-2微波等离子体处理的效果。结果表明，O2微波等离子体处理导致了氧离子在In 2 O3表面的吸附，从而导致了In 2 O3沟道的耗尽。MOCVD生长的具有超高场效应迁移率的In 2 O3薄膜晶体管在下一代平板系统中具有潜在的应用前景。
In this letter, thin-film transistors (TFTs) were demonstrated with In2O3 channel layer prepared by metal-organic chemical vapor deposition (MOCVD). Treated by O-2 microwave plasma on the In2O3 channel, high performance was obtained such as ultra-high field-effect mobility of 243 cm(2)/Vs, ON/OFF current ratio of 10(7), and high stability under negative bias illumination stress, although no typical electrical characteristics were observed for TFTs without O-2 microwave plasma treatment. The effects of O-2 microwave plasma treatment were investigated by Hall effect measurements, X-ray photoelectron spectroscopy, and Kelvin probe force microscopy. The results indicated that the O-2 microwave plasma treatment leads to the oxygen ions adsorption onto the In2O3 surface and the consequent depletion of In2O3 channel. The MOCVD-grown In2O3 TFTs with ultra-high field-effect mobility are potentially applied in the next-generation system on panel.