Characteristics of rutile TiO2 films prepared by rf magnetron sputtering at a low temperature
Characteristics of rutile TiO2 films prepared by rf magnetron sputtering at a low temperature
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DOI：
10.1016/0040-6090(96)08659-2
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发表时间：
1996-08-01
期刊：
影响因子：
2.1
通讯作者：
Shibata, A
中科院分区：
文献类型：
--
作者：
Okimura, K;Maeda, N;Shibata, A
采用射频熔融法制备了二氧化钛薄膜。(13.56 MHz)使用Ar和O2混合气体的磁控溅射。结果表明，晶体结构强烈地依赖于衬底的径向位置和溅射气体的总气压。在总压为0.27Pa的条件下，在径向位置为33 mm的未加热衬底上，用射频溅射的方法成功地制备了金红石型二氧化钛薄膜。功率为200W，在2.7Pa的气压下沉积了锐钛矿型的二氧化钛薄膜。在硅衬底上制备的金红石薄膜中观察到了氧的缺乏和Ar的掺入。此外，在硅衬底上生长的金红石薄膜由尺寸大于100 nm的晶体组成。光学分析表明，在石英衬底上生长的金红石薄膜在波长370 nm处的折射率高达2.67。
TiO2 films were prepared by r.f. (13.56 MHz) magnetron sputtering using a mixture of Ar and O-2 gases. It was found that the crystalline structure strongly depends on the radial position of the substrate and on the total pressure of the sputtering gas. At a total pressure of 0.27 Pa, rutile TiO2 films were successfully obtained on a non-heated substrate located at a radial position of 33 mm with r.f. power of 200 W. While anatase TiO2 films were deposited at a pressure of 2.7 Pa. The deficiency of oxygen and the incorporation of Ar were observed in rutile films prepared on a Si substrate. In addition, rutile films grown on Si substrate were composed of crystal grains which are larger than 100 nm. The optical analysis showed that rutile films on a quartz substrate have a high refractive index of 2.67 at a wavelength of 370 nm.