Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 μm infrared radiation
Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 μm infrared radiation
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用于高速检测 1.55 μm 红外辐射的谐振腔增强型 InGaAs 光电二极管
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
J. Piotrowski
中科院分区：
文献类型：
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作者：
J. Kaniewski;J. Muszalski;J. Pawluczyk;J. Piotrowski
共振腔增强型光电探测器由于其高量子效率和大带宽而在高速光通信领域有着广阔的应用前景。这是将光电探测器的薄吸收体放置在法布里-珀罗微腔内的结果，因此可以通过回收具有共振波长的光子来增强吸收。对工作在1.55 μm附近的非致冷谐振腔增强型InGaAs/InAlAs光伏器件的性能进行了理论和实验研究。分析包括两种不同类型的结构与腔端镜制成的半导体和金属反射器，以及半导体和混合（介电Si 3 N4/SiO2 +金属）布拉格反射器。器件的优化设计包括：吸收层厚度、吸收层在腔内的位置和分布布拉格反射器的层数。讨论了吸收与波长和入射角的关系。讨论了谐振腔增强型光电二极管在光学系统中的应用。用分子束外延和微波兼容工艺制作了具有金属和混合镜的实用器件。这种类型的适当设计的设备具有亚皮秒响应时间的潜力。
Resonant cavity enhanced photodetectors are promising candidates for applications in high-speed optical communications due to their high quantum efficiency and large bandwidth. This is a consequence of placing the thin absorber of the photodetector inside a Fabry-Perot microcavity so the absorption could be enhanced by recycling the photons with resonance wavelength. The performance of uncooled resonant cavity enhanced InGaAs/InAlAs photovoltaic devices operating near 1.55 μm has been studied both theoretically and experimentally. The analyses include two different types of structures with cavity end mirrors made of semiconducting and metallic reflectors as well as semiconducting and hybrid (dielectric Si3N4/SiO2 + metal) Bragg reflectors. Optimization of the device design includes: absorption layer thickness, position of absorption layer within the cavity and number of layers in distributed Bragg reflectors. Dependence of absorption on wavelength and incidence angle are discussed. Various issues related to applications of resonance cavity enhanced photodiodes in optical systems are considered. Practical devices with metallic and hybrid mirrors were fabricated by molecular beam epitaxy and by microwave-compatible processing. A properly designed device of this type has potential for subpicosecond response time.