Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid
Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid
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DOI：
10.1109/tpel.2015.2402595
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发表时间：
2015-02
影响因子：
6.7
通讯作者：
Munaf T. A. Rahimo;F. Canales;R. Minamisawa;C. Papadopoulos;U. Vemulapati;A. Mihaila;S. Kicin;U. Drofenik
中科院分区：
文献类型：
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作者：
Munaf T. A. Rahimo;F. Canales;R. Minamisawa;C. Papadopoulos;U. Vemulapati;A. Mihaila;S. Kicin;U. Drofenik
实验证明了硅（Si）IGBT和碳化硅（SiC）MOSFET的并联布置。交叉开关（XS）混合器件的概念旨在通过提供低静态和动态损耗来实现最佳功率器件性能，同时由于双极Si IGBT和单极SiC MOSFET特性的组合，提高了整体电气和热性能。为了演示XS混合动力，并联配置实验实现在一个单一的封装额定值为1200 V的设备的测试结果，以验证这种方法相对于静态和动态性能相比，一个完整的硅IGBT和一个完整的SiC MOSFET参考器件具有相同的额定功率为XS混合动力样品。
A parallel arrangement of a silicon (Si) IGBT and a silicon carbide (SiC) MOSFET is experimentally demonstrated. The concept referred to as the cross-switch (XS) hybrid aims to reach optimum power device performance by providing low static and dynamic losses while improving the overall electrical and thermal properties due to the combination of both the bipolar Si IGBT and unipolar SiC MOSFET characteristics. For the purpose of demonstrating the XS hybrid, the parallel configuration is implemented experimentally in a single package for devices rated at 1200 V. Test results are obtained to validate this approach with respect to the static and dynamic performance when compared to a full Si IGBT and a full SiC MOSFET reference devices having the same power ratings as for the XS hybrid samples.