Cr‐Si‐O film with a high chromium concentration for strain gauge
Cr‐Si‐O film with a high chromium concentration for strain gauge
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应变计用高铬Cr-Si-O薄膜
DOI：
10.1063/1.101710
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发表时间：
1989
影响因子：
4
通讯作者：
Y. Taga
中科院分区：
文献类型：
--
作者：
H. Yamadera;Y. Taga
我们通过共溅射沉积制备了一种Cr - Si - O薄膜，并对其性能进行了评估，以期应用于应变片。研究发现，在成分为Cr - 1 at.% Si - 19 at.% O的200纳米厚的薄膜中，获得了8.7的最大应变系数。此外，在25 - 120°C的温度范围内，该薄膜的电阻温度系数为8 ppm/°C，并且在高达400°C的温度下退火后电阻的相对变化小于±0.1%。
We prepared a Cr‐Si‐O film by co‐sputter deposition and evaluated the properties with a view to applying to a strain gauge. It was found that the maximum gauge factor of 8.7 was obtained in the 200‐nm‐thick film at the composition of Cr‐1 at. % Si‐19 at. % O. In addition, the temperature coefficient of resistance of the film was 8 ppm/°C in the temperature range of 25–120 °C and the fractional change in resistance after annealing was less than ±0.1% up to 400 °C.