Twofold role of columnar defects in iron based superconductors
Twofold role of columnar defects in iron based superconductors
复制标题
铁基超导体中柱状缺陷的双重作用
DOI：
10.1088/1361-6668/aba350
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
and G. Ghigo,
中科院分区：
文献类型：
--
作者：
D. Torsello;R. Gerbaldo;L. Gozzelino;F. Laviano;A. Takahashi;A. Park;S. Pyon;A. Ichinose;T. Tamegai;and G. Ghigo,
我们报道了通过 1.2 GeV Pb 辐照在 Ba 1− x K x Fe 2 As 2 和 BaFe 2 (As 1− x P x) 2 单晶中引入柱状缺陷。扫描透射电子显微镜分析证明沿离子轨道形成连续缺陷，直径约为3 nm，平面密度与辐照注量相匹配。通过微波技术研究了这种缺陷的双重作用，即作为对破坏者和钉扎中心，使我们能够确定临界温度 T c 、表面阻抗和穿透深度 λ L ，并通过磁光成像和超导量子干涉装置磁力测量来评估临界电流密度 J c 。 T c 的降低相当适度，并且与 λ L 的修改一起证明了辐照后断对散射的增加。 J c 对辐照剂量和温度的依赖性是由于柱状缺陷引起的钉扎景观所致，并且表明存在增强临界电流的最佳辐照剂量。
We report on the introduction of columnar defects in Ba 1− x K x Fe 2 As 2 and BaFe 2 (As 1− x P x) 2 single crystals via 1.2 GeV Pb irradiation. Scanning transmission electron microscopy analysis proves the formation of continuous defects along the ion tracks, with a diameter of about 3 nm, and a planar density compatible with the irradiation fluence. The twofold role of such defects, ie as pair breakers as well as pinning centers, is investigated by a microwave technique, allowing us to determine critical temperature T c, surface impedance and penetration depth λ L, and by magneto-optical imaging and superconducting quantum interference device magnetometry to evaluate the critical current density J c. The decrease of T c is quite modest and, together with λ L modifications, testifies the increase of pair-breaking scattering following irradiation. The dependence of J c on irradiation dose and temperature is due to the pinning landscape induced by the columnar defects, and shows the existence of an optimal irradiation dose to enhance the critical current.
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影响因子：
8.6
作者：
Kontani, Hiroshi;Onari, Seiichiro
通讯作者：
Onari, Seiichiro
影响因子：
3.6
作者：
Sylva, G.;Bellingeri, E.;Braccini, V.
通讯作者：
Braccini, V.
影响因子：
8.6
作者：
Ghigo, G.;Torsello, D.;Canfield, P. C.
通讯作者：
Canfield, P. C.
影响因子：
3.7
作者：
D. Torsello;D. Torsello;G. Ummarino;G. Ummarino;L. Gozzelino;L. Gozzelino;T. Tamegai;G. Ghigo;G. Ghigo
通讯作者：
D. Torsello;D. Torsello;G. Ummarino;G. Ummarino;L. Gozzelino;L. Gozzelino;T. Tamegai;G. Ghigo;G. Ghigo
影响因子：
3.6
作者：
Ghigo, G.;Laviano, F.;Gozzelino, L.
通讯作者：
Gozzelino, L.