High-Bandwidth Operation of Optically Controlled Semiconductor Laser With External Cavity
High-Bandwidth Operation of Optically Controlled Semiconductor Laser With External Cavity
复制标题
外腔光控半导体激光器的高带宽工作
DOI：
10.1109/lpt.2014.2354672
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发表时间：
2014
影响因子：
2.6
通讯作者：
H. Yasaka
中科院分区：
文献类型：
--
作者：
S. Mieda;S. Shiratori;W. Kobayashi;H. Yasaka
通过将相位可控外腔与单模半导体激光器集成，实现了一种高速光控半导体激光器。数值计算证实，当激光模式增益直接由光信号控制时，激光源可以工作在高达50 GHz。利用数值分析的结果，制作了具有优化设计结构的光控半导体激光器。实验证实了>30 GHz的宽3 dB带宽，这是实验装置的测量系统带宽的极限。
A high-speed optically controlled semiconductor laser was numerically and experimentally demonstrated by integrating a phase controllable external cavity with a single mode semiconductor laser. It was numerically confirmed that the laser source can be operated at up to 50 GHz when the lasing-mode gain was directly controlled by an optical signal. The optically controlled semiconductor laser, which has an optimally designed structure using the results from the numerical analysis, was fabricated. A broad 3-dB bandwidth of >30 GHz was experimentally confirmed, which was the limit of the measurement system bandwidth of the experimental setup.