Fined-grained body biasing for frequency scaling in advanced SOI processes
Fined-grained body biasing for frequency scaling in advanced SOI processes
复制标题
用于先进 SOI 工艺中频率缩放的细粒度体偏置
DOI：
10.1109/coolchips.2015.7158655
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
W. Rosenstiel
中科院分区：
文献类型：
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作者：
Johannes Maximilian Kühn;H. Amano;O. Bringmann;W. Rosenstiel
新的SOI工艺在低功耗和性能方面提供了前所未有的灵活性。在频率缩放场景下，对意法半导体28nm UTBB-FDSOI中细粒度体偏置的使用进行了评估，用于动态可重构处理器设计。对加工单元进行了三种不同的策略评估：静态、可编程和动态车身偏置。细粒体偏置显著减轻了前倾体偏置增加的泄漏电流，平均在42.85% ~ 64.5%之间。这使得静态身体偏置成为可行的低成本选择，而动态身体偏置即使在短时间内也是值得的。
New SOI processes offer unprecedented flexibility in regard to low-power and performance. The use of fine-grained body biasing in STMicro's 28nm UTBB-FDSOI is evaluated for a Dynamically Reconfigurable Processor design in a frequency scaling scenario. Three different strategies are evaluated for Processing Elements: Static, programmable and dynamic body biasing. Fine-grained body biasing significantly mitigates increased leakage currents of forward body biasing between 42.85% to 64.5% on average. This makes static body biasing a viable low-cost option and makes dynamic body biasing worthwhile even at short time periods.