Naphthobispyrazine bisimide-based semiconducting polymers as electron acceptors for all-polymer photovoltaic cells

Naphthobispyrazine bisimide-based semiconducting polymers as electron acceptors for all-polymer photovoltaic cells
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DOI:
10.1038/s41428-022-00749-2
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发表时间:
2023-01
期刊:
影响因子:
2.8
通讯作者:
Kenta Okamoto;Yuka Iwasaki;Tsubasa Mikie;I. Osaka
Kenta Okamoto;Yuka Iwasaki;Tsubasa Mikie;I. Osaka
中科院分区:
化学3区
文献类型:
--
作者:
Kenta Okamoto;Yuka Iwasaki;Tsubasa Mikie;I. Osaka

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在这项工作中,我们研究了使用强缺电子萘并双吡嗪双酰亚胺(NPI)作为有机光伏中使用的n型半导体聚合物的构建单元的可行性。我们基于NPI合成了以噻吩并噻吩和噻吩为单元的新型n型半导体聚合物。该聚合物表现出~−3.7eV的深层最低未占据分子轨道能级和小于1.5eV的窄光学带隙,这源于NPI的高电子缺陷。我们发现,减少链长可以提高 NPI 基聚合物的溶解度并降低结晶度。当与基准 p 型聚合物 PTB7-Th 混合时,基于 NPI 的聚合物提供高达 1.6% 的功率转换效率,并在基于 NPI 的聚合物的吸收带表现出清晰的光响应。这项研究表明,基于 NPI 的聚合物作为 n 型材料在有机光伏电池中具有良好的潜力。
In this work, we investigated the feasibility of using strongly electron-deficient naphthobispyrazine bisimide (NPI) as a building unit for n-type semiconducting polymers used in organic photovoltaics. We synthesized new n-type semiconducting polymers based on NPI, in which thienothiophene and thiophene were used as counits. The polymers exhibited deep lowest unoccupied molecular orbital energy levels of ~−3.7 eV and narrow optical bandgaps of less than 1.5 eV, which originated from the high electron deficiency of NPI. We found that decreasing the counit length improved the solubilities and reduced the crystallinities of the NPI-based polymers. When blended with the benchmark p-type polymer PTB7-Th, the NPI-based polymers afforded power conversion efficiencies of up to 1.6% and exhibited clear photoresponses at the absorption band of NPI-based polymers. This study shows that NPI-based polymers have good potential as n-type materials for use in organic photovoltaic cells.