Electroluminescence in vertically aligned quantum dot multilayer light‐emitting diodes fabricating by growth‐induced islanding
Electroluminescence in vertically aligned quantum dot multilayer light‐emitting diodes fabricating by growth‐induced islanding
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通过生长诱导孤岛制造垂直排列量子点多层发光二极管的电致发光
DOI：
10.1063/1.117614
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发表时间：
1996
影响因子：
4
通讯作者：
J. Harris
中科院分区：
文献类型：
--
作者：
G. Solomon;M. Larson;J. Harris
分子束外延（MBE）生长诱导的孤岛工艺已用于形成自组织的多个量子点层，其中来自不同层的量子点垂直排列成列并进行电子耦合。这些结构用作在室温下工作的发光二极管的有源区。使用包含单个、5 个和 10 个 InAs 量子点的量子点柱研究发光二极管。这些二极管在宽波段内发光，典型光谱线宽为 120 nm，峰值在 1000 至 1100 nm 之间。除了量子点光谱特征之外，在单个量子点二极管中还可以看到来自薄量子阱区域的光谱特征，该光谱特征是量子点形成过程的一部分，但在具有包含多个量子点列的有源区域的二极管中被消除。
A molecular beam epitaxy (MBE) growth‐induced islanding process has been used to form self‐organized multiple quantum dot layers, in which quantum dots from different layers are vertically aligned in columns and are electronically coupled. These structures are used as the active region in light‐emitting diodes operating at room temperature. Light‐emitting diodes are investigated using quantum dot columns containing single, 5 and 10 InAs quantum dots. These diodes emit light over a broad band with typical spectral linewidths of 120 nm, peaked between 1000 and 1100 nm. In addition to the quantum dot spectral feature, a spectral feature from a thin quantum well region, integral to the quantum dot formation process, is seen in the single quantum dot diode, but is eliminated in diodes with active regions containing columns of multiple quantum dots.