Complete Monte Carlo model description of lumped-element RSFQ logic circuits
Complete Monte Carlo model description of lumped-element RSFQ logic circuits
复制标题
集总元件 RSFQ 逻辑电路的完整蒙特卡罗模型描述
DOI：
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发表时间：
2005
影响因子：
1.8
通讯作者：
H. R. Gerber
中科院分区：
文献类型：
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作者：
C. Fourie;W. Perold;H. R. Gerber
在过去的十年中，蒙特卡罗模拟已经成为预测RSFQ电路良率的最有用的方法，因为它们考虑了电路上的所有制造容差影响，并且不限于偏置电流变化。在这里，我们最终提出了一个全面的定义，布局提取蒙特卡罗模型创建集总元件Spice仿真的电感，电阻和结面积从统计模型的局部和全局值，包括寄生，层到层的变化，在穿透深度的变化，电容和互耦。最后，除了偏置电流微调的模拟，以补偿大多数的全球变化进行了说明，并列出比较产量的结果。
Over the last decade, Monte Carlo simulations have emerged as the most useful way of predicting the yield of RSFQ circuits, as they consider all manufacturing tolerance effects on a circuit, and are not restricted to bias current variations. Here we finally present a comprehensive definition of layout-extracted Monte Carlo model creation for lumped-element Spice simulations-from the local and global values for inductance, resistance and junction area from statistical models, to the inclusion of parasitics, layer-to-layer variations, variations in the penetration depth, and capacitance and mutual coupling. Finally, the addition of bias current trimming to the simulations to compensate for most global variations is described, and comparative yield results listed.