Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing
Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing
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DOI：
10.35848/1347-4065/ac7621
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发表时间：
2022-06
影响因子：
1.5
通讯作者：
Taiga Horiguchi;T. Hamada;M. Hamada;I. Muneta;K. Kakushima;K. Tsutsui;T. Tatsumi;S. Tomiya;H. Wakabayashi
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文献类型：
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作者：
Taiga Horiguchi;T. Hamada;M. Hamada;I. Muneta;K. Kakushima;K. Tsutsui;T. Tatsumi;S. Tomiya;H. Wakabayashi
本文报道了溅射和硫蒸汽退火激活Nb原子制备的掺Nb(Nb)MoS_2薄膜的正Seebeck系数S=162μV_K−_1。基于化学键状态和电阻率随退火温度和测量温度的变化，讨论了通过这些工艺实现的p型掺杂。这一研究结果为MoS2薄膜的p型掺杂提供了一种新的选择，并有望为纳米电子学的发展和智能社会做出贡献。
Herein we report on the positive Seebeck coefficient S = 162 μV K−1 of niobium (Nb)-doped MoS2 films prepared by sputtering and activation of Nb atoms by sulfur vapor annealing. The p-type doping achieved via these processes is discussed based on changes in chemical bonding states and resistivity behavior in terms of annealing and measurement temperatures. The results of this study provide a new option for p-type doping of MoS2 films and are expected to contribute to the development of nanoelectronics and a smart society.