Bulk- and surface-sensitive high-resolution photoemission study of two mott-hubbard systems: SrVO3 and CaVO3
Bulk- and surface-sensitive high-resolution photoemission study of two mott-hubbard systems: SrVO3 and CaVO3
复制标题
DOI：
10.1103/physrevlett.96.076402
复制
发表时间：
2006-02-24
影响因子：
8.6
通讯作者：
Taniguchi, M
中科院分区：
文献类型：
--
作者：
Eguchi, R;Kiss, T;Taniguchi, M
我们研究了莫特-哈伯德系统SrVO 3和CaVO 3的电子结构与体和表面敏感的高分辨率光电子能谱，使用真空紫外激光，同步辐射，和放电灯（h nu=7-21 eV）。随着光子能量的降低，态密度（DOS）被系统地抑制在费米能级（E-F）的0.2 eV以内，即，提高了灵敏度。在SrVO 3和CaVO 3的相干带示出由表面和批量衍生的功能，分离的能量。与SrVO 3相比，CaVO 3表面上更强的扭曲导致在E-F的相干DOS中更高的表面金属丰度，与最近的理论一致。
We study the electronic structure of Mott-Hubbard systems SrVO3 and CaVO3 with bulk and surface-sensitive high-resolution photoemission spectroscopy, using a vacuum ultraviolet laser, synchrotron radiation, and a discharge lamp (h nu=7-21 eV). A systematic suppression of the density of states (DOS) within similar to 0.2 eV of the Fermi level (E-F) is found on decreasing photon energy, i.e., on increasing bulk sensitivity. The coherent band in SrVO3 and CaVO3 is shown to consist of surface and bulk-derived features, separated in energy. The stronger distortion on surface of CaVO3 compared to SrVO3 leads to a higher surface metallicity in the coherent DOS at E-F, consistent with recent theory.