Ultrahigh Hall mobility and suppressed backward scattering in layered semiconductor Bi2O2Se
Ultrahigh Hall mobility and suppressed backward scattering in layered semiconductor Bi2O2Se
复制标题
层状半导体 Bi2O2Se 中的超高霍尔迁移率和抑制后向散射
DOI：
10.1063/1.5042727
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发表时间：
2018
影响因子：
4
通讯作者：
Zhang Rong
中科院分区：
文献类型：
--
作者：
Tong Tong;Zhang Minhao;Chen Yequan;Li Yan;Chen Liming;Zhang Junran;Song Fengqi;Wang Xuefeng;Zou Wenqin;Xu Yongbing;Zhang Rong
我们报告了普通层状半导体 Bi2O2Se 具有超过 40 000 cm2/V s 的超高霍尔迁移率和非常长的传统散射时间。在不饱和纵向线性磁阻 Rxx 和横向霍尔电阻 Rxy 中均观察到 Shubnikov-de Haas (SdH) 振荡。 SdH振荡的振幅ΔRxy相对于ΔRxx相移约180°，表明电子后向散射受到强烈抑制。输运寿命比量子寿命长 10 倍的证据进一步证明了这一点。我们的结果表明，非平凡狄拉克半金属中的抑制后向散射也可以发生在平凡半导体 Bi2O2Se 中。
We report on an ultrahigh Hall mobility exceeding 40 000 cm2/V s and a very long traditional scattering time in a trivial layered semiconductor Bi2O2Se. Shubnikov-de Haas (SdH) oscillations were observed in both the unsaturated longitudinal linear magnetoresistance Rxx and the transverse Hall resistance Rxy. The amplitude ΔRxy of SdH oscillations was phase-shifted approximately 180° with respect to ΔRxx, indicating the strong suppression of electron backward scattering. This was further proved by the evidence of transport lifetime that is 10 times longer than the quantum lifetime. Our results show that the suppressed backward scattering in nontrivial Dirac semimetals can also occur in the trivial semiconductor Bi2O2Se.