Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates
Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates
复制标题
独立式 3C-SiC 衬底上立方 III 族氮化物的分子束外延
DOI：
--
复制
发表时间：
2006
期刊：
影响因子：
--
通讯作者：
M. Abe
中科院分区：
文献类型：
--
作者：
D. As;S. Potthast;J. Schörmann;S.F. Li;K. Lischka;H. Nagasawa;M. Abe
利用等离子体辅助分子束外延技术，在200 m厚的独立sic衬底上生长了立方GaN、AlxGa1-xN/GaN和InyGa1-yN/GaN多量子阱（MQW）层。讨论了生长过程中表面粗糙度和金属覆盖度的影响。当生长表面形成单层的Ga覆盖层时，存在c-III氮化物的最佳生长条件。在c- sic衬底上生长的立方iii -氮化物层和多层层的结构性能得到了改善，其中厚度为1 μm的c-GaN层的x射线摆动曲线宽度最小为16 arcmin， c-AlGaN/GaN和c-InGaN/GaN mqw在x射线衍射中分别出现了多达5个卫星峰。
Cubic GaN, AlxGa1-xN/GaN and InyGa1-yN/GaN multiple quantum well (MQW) layers were grown by plasma assisted molecular beam epitaxy on 200 &m thick free standing 3C-SiC substrates. The influence of the surface roughness of the 3C-SiC substrates and the influence of metal coverage during growth are discussed. Optimum growth conditions of c-III nitrides exist, when a one monolayer Ga coverage is formed at the growing surface. The improvement of the structural properties of cubic III-nitride layers and multilayers grown on 3C-SiC substrates is demonstrated by 1 μm thick c-GaN layers with a minimum x-ray rocking curve width of 16 arcmin, and by c-AlGaN/GaN and c-InGaN/GaN MQWs which showed up to five satellite peaks in X-ray diffraction, respectively.