Annealing-temperature dependence: Mechanism of Hf silicidation in HfO2 gate insulators on Si by core-level photoemission spectroscopy
Annealing-temperature dependence: Mechanism of Hf silicidation in HfO2 gate insulators on Si by core-level photoemission spectroscopy
复制标题
DOI：
10.1063/1.2150600
复制
发表时间：
2006-01
影响因子：
3.2
通讯作者：
S. Toyoda;J. Okabayashi;H. Takahashi;H. Kumigashira;M. Oshima;M. Niwa;K. Usuda;G. L. Liu
中科院分区：
文献类型：
--
作者：
S. Toyoda;J. Okabayashi;H. Takahashi;H. Kumigashira;M. Oshima;M. Niwa;K. Usuda;G. L. Liu
我们通过高分辨率核心级光电子能谱和详细的退火温度控制研究了 Si 上 HfO2 栅极绝缘体的 Hf 硅化机制。我们发现硅化温度取决于界面层化学态的差异。比SiO2层更稳定的Hf硅酸盐层可防止硅化。此外，硅化过程也促进SiO2的形成。核心级光发射光谱的化学位移取决于界面层厚度和 HfO2 顶层中的 SiO2 浓度，这些可以通过详细的退火温度进行调节。
We have investigated the mechanism of Hf silicidation from HfO2 gate insulators on Si by high-resolution core-level photoemission spectroscopy with detailed annealing-temperature controlling. We have found that the silicidation temperature depends on the difference of the chemical states at the interfacial layer. The Hf-silicate layer which is more stable than the SiO2 layer prevents the silicidation. In addition, silicidation processes also promote the formation of SiO2. Chemical shifts in core-level photoemission spectra depend on the interfacial-layer thickness and SiO2 concentration in the HfO2 top layer, which are tunable by detailed annealing temperature.