Disappearance of the quasi-one-dimensional plasmon at the metal-insulator phase transition of indium atomic wires
Disappearance of the quasi-one-dimensional plasmon at the metal-insulator phase transition of indium atomic wires
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DOI：
10.1103/physrevb.77.205415
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发表时间：
2008-05
影响因子：
3.7
通讯作者：
Canhua Liu;T. Inaoka;S. Yaginuma;T. Nakayama;M. Aono;T. Nagao
中科院分区：
文献类型：
--
作者：
Canhua Liu;T. Inaoka;S. Yaginuma;T. Nakayama;M. Aono;T. Nagao
利用电子能量损失谱（EELS）对Si（111）上的铟原子线阵列和结构之间的温度诱导相变进行了研究。在室温下所测相的EELS谱显示出一个明显的动量依赖的能量损失峰，该能量损失峰归属于由In原子线的一维金属电子态产生的一维等离子体。相反，在80k的结构中，等离子体峰值完全消失。这一结果可以用金属-绝缘体跃迁时一维电子能带在费米能处的宽间隙来解释。
An array of indium atomic wires on Si(111) exhibits a temperature-induced phase transition betweenandstructures, both of which were investigated by using electron energy loss spectroscopy (EELS). The EELS spectra of thephase taken at room temperature show a clear momentum-dependent energy loss peak, which is assigned to the one-dimensional (1D) plasmon originating from 1D metallic electronic state of the In atomic wires. In thestructure at 80 K, in contrast, the plasmon peak completely disappears. This result is explained by the wide gap opening of the 1D electronic band at the Fermi energy at the metal-insulator transition between theandstructures.