The low and high temperature thermoelectric properties of Yb3Si5
The low and high temperature thermoelectric properties of Yb3Si5
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DOI：
10.1088/2053-1591/ac128a
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发表时间：
2021
影响因子：
2.3
通讯作者：
F. Ahmed;J. Valenta;N. Tsujii;A. Hussain;Nawishta Jabeen;T. Mori
中科院分区：
文献类型：
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作者：
F. Ahmed;J. Valenta;N. Tsujii;A. Hussain;Nawishta Jabeen;T. Mori
硅化物由于其丰富的元素以及热稳定性和化学稳定性而在热电应用中引起了极大的兴趣。在本文中，我们研究了Yb3Si5多晶样品在10至800 K的宽温度范围内的热电性能。通过假设窄4f准粒子带成功地分析了塞贝克系数的温度依赖性，表明Yb2+-Yb3+的中间价态是高功率因数的原因。对于 Yb3Si5，在 72 K 和室温下观察到非常大的最大功率因数 ∼ 4.70 mWm−1K−2 ∼ 1.56 mWm−1K−2 。这些结果表明，Yb-Si 化合物在未来作为低温 TE 应用具有巨大的潜力。我们还研究了 Yb3Si5（即 Yb3Co x Si5−x，其中 x = 0、0.1、0.15、0.20）中的 Co 掺杂效应，并研究了它们的热电性能。虽然粉末 X 射线衍射分析证实所有主峰都指向 Yb3Si5 相，但 SEM 和 EDX 分析表明 Co 以金属颗粒形式沉淀，形成具有 Yb3Si5 相的复合材料。还报道了钴掺杂样品的热电特性。
Silicides have been of great interest for thermoelectric applications due to their abundant elements as well as thermal and chemical stability. In this paper, we examined the thermoelectric properties of Yb3Si5 polycrystalline samples in a wide temperature range from 10 to 800 K. The temperature dependence of the Seebeck coefficient was successfully analyzed by assuming a narrow 4f quasi-particle band, indicating the intermediate valence state of Yb2+-Yb3+ is responsible for the high power factor. A very large maximum power factor of ∼ 4.70 mWm−1K−2 was observed at 72 K and room temperature value ∼ 1.56 mWm−1K−2 for Yb3Si5. These results shows that Yb-Si compounds have large potential to be used as low temperature TE applications in the future. We also studied the Co-doping effect in Yb3Si5, namely, Yb3Co x Si5−x where x = 0, 0.1, 0.15, 0.20 and investigated their thermoelectric properties. While powder X-ray diffraction analysis confirmed all main peaks indexed to Yb3Si5 phase, SEM and EDX analyses revealed that Co is precipitated as metal particles, forming a composite material with Yb3Si5 phase. Thermoelectric properties of the Co-doped samples are also reported.