Time-Resolved X-Ray Absorption Spectroscopy for Laser-Ablated Silicon Particles in Xenon Gas
Time-Resolved X-Ray Absorption Spectroscopy for Laser-Ablated Silicon Particles in Xenon Gas
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氙气中激光烧蚀硅颗粒的时间分辨 X 射线吸收光谱
DOI：
10.1143/jjap.35.l735
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发表时间：
1996
影响因子：
1.5
通讯作者：
Kouichi Murakami Kouichi Murakami
中科院分区：
文献类型：
--
作者：
Tetsuya Makimura Tetsuya Makimura;Tamaki Sakuramoto Tamaki Sakuramoto;Kouichi Murakami Kouichi Murakami
我们开发了一种实验室规模的软X射线吸收光谱原位装置，其时间分辨率为10 ns，空间分辨率为100 µm。利用该谱仪，我们研究了激光烧蚀形成的硅原子在氙气中的动力学。研究发现，氙原子中的4d电子是通过与激光产生的硅等离子体中的电子碰撞而被激发的。
We developed a laboratory-scale in situ apparatus for soft X-ray absorption spectroscopy with a time resolution of 10 ns and a space resolution of 100 µm. Utilizing this spectrometer, we have investigated the dynamics of silicon atoms formed by laser ablation in xenon gas. It was found that 4d-electrons in the xenon atoms are excited through collision with electrons in the laser-generated silicon plasma.