Explicit continuous model for long-channel undoped surrounding gate MOSFETs
Explicit continuous model for long-channel undoped surrounding gate MOSFETs
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DOI：
10.1109/ted.2005.852892
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发表时间：
2005-07
影响因子：
3.1
通讯作者：
B. Iñíguez;D. Jiménez;J. Roig;H. A. Hamid;L. Marsal;J. Pallarès
中科院分区：
文献类型：
--
作者：
B. Iñíguez;D. Jiménez;J. Roig;H. A. Hamid;L. Marsal;J. Pallarès
本文提出了一个圆柱形无掺杂环绕栅（SGT）MOSFET的解析连续直流模型，其中沟道电流被写为外加电压的显式函数。该模型是基于一个新的统一的电荷控制模型开发的这种设备。显式模型显示出良好的协议与新的电荷控制模型，这是以前通过比较与三维数值模拟验证获得的数值精确解。
We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations.