Effects of neutron-induced well potential perturbation for multiple cell upset of flip-flops in 65nm
Effects of neutron-induced well potential perturbation for multiple cell upset of flip-flops in 65nm
复制标题
中子诱导的势阱扰动对 65nm 触发器多单元扰动的影响
DOI：
10.1109/tns.2012.2229718
复制
发表时间：
2013
影响因子：
1.8
通讯作者：
Hidetoshi Onodera
中科院分区：
文献类型：
--
作者：
Jun Furuta;Ryosuke Yamamoto;Kazutoshi Kobayashi;Hidetoshi Onodera
我们测量和研究了中子辐照下阱势扰动与多单元翻转（MCU）之间的关系。面积有效的基于单元的扰动检测器被放置在FF（触发器）附近。在两个电压水平下，它们都能以5 μm的空间分辨率测量微扰持续时间.用中子辐照65 nm体CMOS的测量结果表明，95%的MCU与阱势扰动同时发生，而单粒子翻转（SEU）与阱势扰动的关系很弱。
We measure and investigate the relationship between well potential perturbation and multiple cell upsets (MCUs) by neutron irradiation. Area-efficient cell-based perturbation detectors are placed adjacent to FFs (Flip-Flops). They can measure duration time of perturbation with 5 μm spatial resolution at two voltage levels. The measurement results by neutron irradiation on a 65-nm bulk CMOS show that 95% of MCUs occur simultaneously with well-potential perturbation, while there is very weak relationship between single event upsets (SEUs) and the perturbation.