Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests
Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests
复制标题
单次和重复测试下 p-GaN 栅极高电子迁移率晶体管的短路能力表征和分析
DOI：
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
K. J. Chen
中科院分区：
文献类型：
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作者：
Jiahui Sun;Jin Wei;Zheyang Zheng;K. J. Chen
本文研究了650 v肖特基型p-GaN栅极高电子迁移率晶体管（HEMTs）在单次和重复测试下的短路性能。所研究的器件在单次SC测试中表现出较强的性能，但在母线电压为400 V和栅极驱动电压为6 V的重复SC测试中表现出较弱的性能。通过电热模拟和微尺度失效点分析，揭示了重复SC试验下的失效机理。窄氮化镓通道和缓冲层由于高温峰值和局部温度波动而形成热疲劳裂纹，导致重复SC能力弱。氮化镓层中独特的热约束效应对高温尖峰和疲劳裂纹的形成起着重要作用。单次SC测试的耐受时间为几百微秒，这是由于高温导致的快速漏极电流下降，以及在较小程度上，SC瞬态期间的动态阈值电压移动。在单事件SC试验中，设备的失效与热扩散到更大的区域有关。提出了一些处理和提高重复SC能力的指导方针。
Short circuit (SC) capability of 650-V Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs) under single and repetitive tests is characterized in this article. The investigated devices exhibit strong capability under a single SC test, but weak capability under repetitive SC tests with a bus voltage of 400 V and a gate drive voltage of 6 V. The failure mechanism under repetitive SC tests is revealed through electrothermal simulation and microscale failure spot analysis. Thermal fatigue cracks are formed due to the high temperature spike and local temperature fluctuations in the narrow GaN channel and buffer layers, leading to weak repetitive SC capability. The unique heat confinement effect in the GaN layer plays an important role in the formation of high temperature spike and fatigue cracks. The withstand time in a single SC test is several hundred microseconds due to fast drain current drop that results from high temperature and, to a lesser degree, the dynamic threshold voltage shift during the SC transient. The device failure in a single-event SC test is related to heat diffusion to a wider region. Some guidelines are proposed for handling and improving the repetitive SC capability.
影响因子：
4.4
作者：
Yang, Shaoyong;Bryant, Angus;Tavner, Peter
通讯作者：
Tavner, Peter