Lattice disorder produced in GaN by He-ion implantation
Lattice disorder produced in GaN by He-ion implantation
复制标题
氦离子注入在 GaN 中产生晶格无序
DOI：
10.1016/j.nimb.2016.12.039
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发表时间：
2017-09-01
影响因子：
1.3
通讯作者：
He, Wenhao
中科院分区：
文献类型：
--
作者：
Han, Yi;Peng, Jinxin;He, Wenhao
通过拉曼光谱、高分辨率X射线衍射(HRXRD)、纳米压痕和透射电子显微镜(TEM)的结合，研究了在室温(RT)下，在注量为2 x 10(16)、5 x 10(16)和1 x 10(17) cm(-2)的GaN外延薄膜中氦离子注入引起的晶格紊乱。实验结果表明拉曼强度随着注量的增加而降低。氦离子注入后拉曼频率发生“红移”。应变随着能量密度的增加而增加。高度受损层的硬度随着注量的增加而单调增加。微观结构结果表明，损伤带的宽度和观察到的位错环的数量密度随着注量的增加而增加。高分辨率TEM图像显示He离子注入导致平面缺陷的形成，并且大多数晶格缺陷是填隙型基底环。讨论了拉曼强度、晶格应变、膨胀和硬度与He注入引起的晶格紊乱的关系。 (C) 2016 Elsevier B.V. 保留所有权利。
The lattice disorders induced by He-ion implantation in GaN epitaxial films to fluences of 2 x 10(16), 5 x 10(16) and 1 x 10(17) cm(-2) at room temperature (RT) have been investigated by a combination of Raman spectroscopy, high-resolution X-ray diffraction (HRXRD), nano-indentation, and transmission electron microscopy (TEM). The experimental results present that Raman intensity decreases with increasing fluence. Raman frequency "red shift" occurs after He-ion implantation. Strain increases with increasing fluence. The hardness of the highly damaged layer increases monotonically with increasing fluence. Microstructural results demonstrate that the width of the damage band and the number density of observed dislocation loops increases with increasing fluence. High-resolution TEM images exhibit that He-ion implantation lead to the formation of planar defects and most of the lattice defects are of interstitial-type basal loops. The relationships of Raman intensity, lattice strain, swelling and hardness with He-implantation-induced lattice disorders are discussed. (C) 2016 Elsevier B.V. All rights reserved.