A novel stress sensor based on the transverse pseudo-Hall effect of MOSFETs
A novel stress sensor based on the transverse pseudo-Hall effect of MOSFETs
复制标题
一种基于MOSFET横向赝霍尔效应的新型应力传感器
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
O. Paul
中科院分区：
文献类型：
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作者：
M. Doelle;P. Ruther;O. Paul
报道了一种基于金属氧化物场效应晶体管(MOSFET)器件对机械载荷的横向伪霍尔响应的新型应力传感器。除了源极/漏极触点之外，本工作中研究的MOSFET还具有与沟道区垂直的额外触点。除了理论上的考虑外，本文还介绍了不同横向尺寸的正方形MOSFET的实验结果。对NMOS和PMOS增强模式器件进行了研究。测量了应力灵敏度与漏源电压Vds和栅源电压Vgs的关系。从这些结果中提取了应力敏感系数/Spl Pi//sub44，n/和/Spl Pi//sub44，p/。
This paper reports a novel stress sensor based on the transverse, i.e., pseudo-Hall response of metal oxide field effect transistor (MOSFET) devices to mechanical loads. In addition to source/drain contacts the MOSFETs investigated in this work feature additional perpendicular contacts to the channel region. Beside theoretical considerations, the paper covers experimental results of square MOSFETs with different lateral dimensions. Both NMOS and PMOS enhancement-mode devices are investigated. The dependence of the stress sensitivity on drain-source and gate-source voltages VDS and VGS was measured. Stress sensitivity coefficients /spl Pi//sub 44,n/ and /spl Pi//sub 44,p/ were extracted from these results.