Growth of graphene from solid carbon sources
Growth of graphene from solid carbon sources
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DOI：
10.1038/nature09579
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发表时间：
2010-11-25
期刊：
影响因子：
64.8
通讯作者：
Tour, James M.
中科院分区：
文献类型：
--
作者：
Sun, Zhengzong;Yan, Zheng;Tour, James M.
单层石墨烯于2004年首次作为可转移材料获得（1），并激发了物理学家，化学家和材料科学家的强烈活动（1-4）。许多研究已经集中在开发用于获得单层或双层石墨烯的大片的途径上。这最近已经通过在铜或镍基底上化学气相沉积（CVD）CH 4或C2 H2气体来实现（5-7）。但CVD仅限于使用气态原料，因此很难将该技术应用于更广泛的潜在原料。在这里，我们证明了可以在低至800摄氏度的温度下，从不同的固体碳源（如聚合物薄膜或小分子）沉积在金属催化剂基底上生长出大面积、高质量、厚度可控的石墨烯。原始石墨烯和掺杂石墨烯都使用相同的实验装置用该一步法生长。
Monolayer graphene was first obtained(1) as a transferable material in 2004 and has stimulated intense activity among physicists, chemists and material scientists(1-4). Much research has been focused on developing routes for obtaining large sheets of monolayer or bilayer graphene. This has been recently achieved by chemical vapour deposition (CVD) of CH4 or C2H2 gases on copper or nickel substrates(5-7). But CVD is limited to the use of gaseous raw materials, making it difficult to apply the technology to a wider variety of potential feedstocks. Here we demonstrate that large area, high-quality graphene with controllable thickness can be grown from different solid carbon sources-such as polymer films or small molecules-deposited on a metal catalyst substrate at temperatures as low as 800 degrees C. Both pristine graphene and doped graphene were grown with this one-step process using the same experimental set-up.