Current-induced magnetization switching with a spin-polarized scanning tunneling microscope
Current-induced magnetization switching with a spin-polarized scanning tunneling microscope
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DOI:
10.1126/science.1145336
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发表时间:
2007-09-14
期刊:
影响因子:
56.9
通讯作者:
Wiesendanger, R.
中科院分区:
文献类型:
--
作者:
Krause, S.;Berbil-Bautista, L.;Wiesendanger, R.
Switching the magnetization of a magnetic bit by injection of a spin-polarized current offers the possibility for the development of innovative high-density data storage technologies. We show how individual superparamagnetic iron nanoislands with typical sizes of 100 atoms can be addressed and locally switched using a magnetic scanning probe tip, thus demonstrating current-induced magnetization reversal across a vacuum barrier combined with the ultimate resolution of spin-polarized scanning tunneling microscopy. Our technique allows us to separate and quantify three fundamental contributions involved in magnetization switching (i.e., current-induced spin torque, heating the island by the tunneling current, and Oersted field effects), thereby providing an improved understanding of the switching mechanism.