Anisotropic Anomalous Hall Effect of Topological Origin in Carrier-Doped FeCr2S4
Anisotropic Anomalous Hall Effect of Topological Origin in Carrier-Doped FeCr2S4
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DOI：
10.1143/jpsj.75.013710
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发表时间：
2006-01
影响因子：
1.7
通讯作者：
K. Ohgushi;S. Miyasaka;Y. Tokura
中科院分区：
文献类型：
--
作者：
K. Ohgushi;S. Miyasaka;Y. Tokura
研究了单晶的反常霍尔效应（AHE）% Ag-doped FeCr 2 S 4 with the rotation of the magnetic field ( H ) within the y z plane (the current along \(\hat{x}\), the Hall voltage along \(\hat{y}\)). We observed a clear deviation from the cos θ dependence (θ being the angle between H and \(\hat{z}\)), which indicates the presence of an anisotropic AHE. We analyzed a tight-binding model of the diamond lattice with the Dzyaloshinskii–Moriya interaction and reproduced the characteristic experimentally observed features. The quantum topology nature of the AHE is revealed in this compound.
The anomalous Hall effect (AHE) was investigated for a single crystal of 6% Ag-doped FeCr 2 S 4 with the rotation of the magnetic field ( H ) within the y z plane (the current along \(\hat{x}\), the Hall voltage along \(\hat{y}\)). We observed a clear deviation from the cos θ dependence (θ being the angle between H and \(\hat{z}\)), which indicates the presence of an anisotropic AHE. We analyzed a tight-binding model of the diamond lattice with the Dzyaloshinskii–Moriya interaction and reproduced the characteristic experimentally observed features. The quantum topology nature of the AHE is revealed in this compound.