X-band AlGaN/GaN HEMT with over 80W Output Power
X-band AlGaN/GaN HEMT with over 80W Output Power
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DOI：
10.1109/csics.2006.319950
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发表时间：
2006-11
期刊：
影响因子：
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通讯作者：
K. Takagi;K. Masuda;Y. Kashiwabara;H. Sakurai;K. Matsushita;S. Takatsuka;H. Kawasaki;Y. Takada;K. Tsuda
中科院分区：
文献类型：
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作者：
K. Takagi;K. Masuda;Y. Kashiwabara;H. Sakurai;K. Matsushita;S. Takatsuka;H. Kawasaki;Y. Takada;K. Tsuda
AlGaN/GaN高电子迁移率晶体管(HEMTs)是为X波段应用而研制的。研究了连续波工作条件下的输出功率特性与工作电压和温度的关系。研制的AlGaN/GaN HEMT采用11.52 mm栅周的两个管芯组合，在VDS=30V，连续工作频率9.5 GHz，增益压缩水平为3dB时，输出功率大于81.3W，功率附加效率(PAE)为34%
AlGaN/GaN high electron mobility transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 11.52 mm gate periphery exhibits output power of over 81.3W with a power added efficiency (PAE) of 34% under VDS=30V, CW operating condition at 9.5GHz, and a gain compression level of 3dB