Electronic structure of superconducting InN
Electronic structure of superconducting InN
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DOI：
10.1016/j.stam.2006.05.009
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发表时间：
2006-01-01
影响因子：
5.5
通讯作者：
Inushima, Takashi
中科院分区：
文献类型：
--
作者：
Inushima, Takashi
我们报道了n型InN中超导性的研究。存在超导性发生的最佳载流子密度。最低载流子密度受限于n(e)的Mott跃迁，约为2 × 10(17) cm(-3)；最高载流子密度受限于n(e)的超导体到绝缘体的跃迁，约为5 × 10(20) cm（-3）。我们提出了一种机制，其中超导性的发生与ab平面上有限长度的in - in链的存在有关。In In链源于蓝宝石（0001）上生长的InN的反转结构域，并沿着[11 (2)bar0]延伸，通过耦合形成微约瑟夫森结。(c) 2006年NTMS与Elsevier Ltd.版权所有。
We report on an investigation of superconductivity in n-type InN. There is an optimum carrier density for the occurrence of the superconductivity. The lowest carrier density is limited by the Mott transition of n(e)similar to 2 x 10(17) cm(-3) and the highest density is limited by the superconductor to insulator transition of n(e)similar to 5 x 10(20) cm(-3). We propose a mechanism where the occurrence of the superconductivity is related to the presence of In-In chains of finite length in the ab plane. The In In chains, which originate from the inversion domains of InN grown on sapphire (0001) and elongate along [11 (2) over bar0], are coupled to form micro Josephson-junctions. (c) 2006 NTMS and Elsevier Ltd. All rights reserved.