Modeling scatter from silicon wafer features based on discrete sources method
Modeling scatter from silicon wafer features based on discrete sources method
复制标题
基于离散源方法的硅片特征散射建模
DOI：
10.1117/1.602187
复制
发表时间：
1999
影响因子：
1.3
通讯作者：
N. Orlov
中科院分区：
文献类型：
--
作者：
Y. Eremin;J. Stover;N. Orlov
本文将离散源法（DSM）推广到研究各种硅片特征光散射的完整数学模型。计算机模拟表明有用的DSM比较散射信号与不同的表面特征。晶片的特点，如污染的颗粒，表面缺陷和坑进行了调查。© 1999年照片-光学仪器工程师协会。（S0091 - 3286（99）00908 - 3）
The discrete sources method (DSM) is extended to investi- gate complete mathematical models for light scattering from various kinds of silicon wafers features. Computer simulations demonstrate the usefulness of the DSM for comparing scatter signals associated with different surface features. Wafer features such as contaminating par- ticles, subsurface defects and pits are investigated. © 1999 Society of Photo- Optical Instrumentation Engineers. (S0091-3286(99)00908-3)