Defects in silicon substrates
Defects in silicon substrates
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DOI：
10.1116/1.569117
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发表时间：
1977
期刊：
影响因子：
--
通讯作者：
S. Hu
中科院分区：
文献类型：
--
作者：
S. Hu
本文回顾了硅衬底中一些重要的缺陷：它们的性质和几何分布；形成机制；他们的相互作用；及其影响。讨论的主题包括点缺陷簇和位错簇的漩涡聚集体；热应力产生的位错；热氧化在基材表面和主体内产生的堆垛层错；以及氧气的聚集和沉淀。
This paper reviews some defects of major importance in silicon substrates: their nature and geometrical distribution; the mechanism of formation; their interplays; and their implications. Topics discussed include swirl aggregates of point‐defect clusters and dislocation clusters; dislocations generated by thermal stresses; stacking faults generated by thermal oxidation both on the surface and in the bulk of substrates; and clustering and precipitation of oxygen.