Amplified spontaneous emission in an organic semiconductor multilayer waveguide structure including a highly conductive transparent electrode
Amplified spontaneous emission in an organic semiconductor multilayer waveguide structure including a highly conductive transparent electrode
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包括高导电透明电极的有机半导体多层波导结构中的放大自发发射
DOI：
10.1063/1.1938001
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发表时间：
2005
影响因子：
4
通讯作者：
U. Lemmer
中科院分区：
文献类型：
--
作者：
M. Reufer;J. Feldmann;P. Rudati;A. Ruhl;D. Müller;K. Meerholz;C. Karnutsch;M. Gerken;U. Lemmer
我们表明，放大的自发辐射（ASE）阈值在多层波导结构中适用于在未来的有机注入激光器可以大大降低通过插入一个交联的空穴传输层（HTL）之间的高导电性的氧化铟锡（ITO）电极和聚合物发光层。虽然当活性层材料直接旋涂到ITO电极上时没有观察到ASE，但在插入300 nm厚的HTL时可以完全恢复。这一观察结果是由于减少衰减的波导模式，使ASE过程中，并在理论上证实了模式的强度分数的计算中传播的吸收性ITO电极。
We demonstrate that the amplified spontaneous emission (ASE) threshold in multilayer waveguide structures suitable for the use in future organic injection lasers can be drastically reduced by inserting a crosslinked hole transport layer (HTL) between a highly conductive indium tin oxide (ITO) electrode and the polymer emission layer. While no ASE is observed when the active layer material is directly spincoated onto the ITO electrode, it can be completely restored upon insertion of a 300-nm-thick HTL. This observation is attributed to reduced attenuation of the waveguided mode enabling the ASE process and is theoretically confirmed by calculations of the mode intensity fraction propagating in the absorptive ITO electrode.