Ferromagnetism in Fe-implanted a-plane ZnO films
Ferromagnetism in Fe-implanted a-plane ZnO films
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DOI：
10.1063/1.2213519
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发表时间：
2006-07
影响因子：
4
通讯作者：
P. Wu;G. Saraf;Yicheng Lu;D. H. Hill;R. Gateau;L. Wielunski;R. Bartynski;D. Arena;J. Dvorak;A. Moodenbaugh;T. Siegrist;J. A. Raley;Y. Yeo
中科院分区：
文献类型：
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作者：
P. Wu;G. Saraf;Yicheng Lu;D. H. Hill;R. Gateau;L. Wielunski;R. Bartynski;D. Arena;J. Dvorak;A. Moodenbaugh;T. Siegrist;J. A. Raley;Y. Yeo
在200 keV下，Fe离子注入a面ZnO外延膜，注入剂量为5× 1016 cm-2。通过X射线衍射ω-摇摆曲线和φ扫描验证了退火后样品的外延质量，而X射线吸收光谱确定了Fe 2+和Fe 3+离子的存在，以及退火后它们的相对浓度的变化。超导量子干涉仪测量表明，注入态和退火后的薄膜在室温下具有铁磁性。在退火过程中的饱和磁化强度降低可能是由于氧空位的数量减少。
Fe ions of dose 5×1016cm−2 were implanted at 200keV into a-plane ZnO epitaxial films. The epitaxial quality of the postannealed samples was verified by x-ray diffraction ω-rocking curves and φ scans, whereas x-ray absorption spectroscopy identified the presence of both Fe2+ and Fe3+ ions, as well as changes in their relative concentration during postannealing. Superconducting quantum interference device measurements show that the as-implanted and postannealed films are ferromagnetic at room temperature. The saturation magnetization reduces during annealing possibly due to the decrease in the number of oxygen vacancies.