Composition, surface topography, structure, Raman, and electrochemical/photoelectrochemical characterisation of CdxHg1−xTe films
Composition, surface topography, structure, Raman, and electrochemical/photoelectrochemical characterisation of CdxHg1−xTe films
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CdxHg1−xTe 薄膜的成分、表面形貌、结构、拉曼和电化学/光电化学表征
DOI：
10.1016/0927-0248(95)00173-5
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
C. Sánchez
中科院分区：
文献类型：
--
作者：
S. N. Sahu;M. Antonio;C. Sánchez
在恒电位条件下，在含有 Cd2+:Hg2+:HTeO2+= 100:1:2 各自离子的酸性溶液中，在导电玻璃和 Ti 基底上电沉积富含 Cd 的 CdxHg1 - xTe 薄膜。由单个电化学电池依次制备了六层薄膜。空气退火薄膜的 EDAX 分析显示，随着薄膜制备次数的增加，沉积物中的汞含量不断降低。 SEM 分析表明顶部表面具有富含汞簇的波状表面。 XRD 分析表明存在 CdxHg1 - xTe 以及 CdTe HgTe 。 CdxHg1 - xTe 合金的形成已通过拉曼位移测量得到证实，该位移随成分 x 的变化而变化。沉积时的薄膜是n型的，但在空气退火后转变为p型。光谱响应测量给出的带隙值随沉积物中汞含量的变化而变化。估计带隙值范围为 1.1 eV 至 1.45 eV。制备了使用多硫化物电解质的光电化学太阳能电池，在60 mW/cm2光照强度下，其开路光电压和短路光电流分别为325 mV和5.5 mA/cm2。
Cd-rich CdxHg1 − xTe films have been electrodeposited under potentiostatic conditions on conducting glass and Ti substrates from an acidic solution containing the respective ions as Cd2+:Hg2+:HTeO2+= 100:1:2. Six films one after another have been prepared from a single electrochemical cell. EDAX analysis of the air annealed films show decreasing Hg content in the deposit as the number of film preparation increases. SEM analysis indicate undulatory surface with Hg-rich clusters at the top surface. XRD analysis indicate the presence of CdxHg1 − xTe along with CdTe HgTe . The CdxHg1 − xTe alloy formation have been confirmed from Raman shift measurements which change with composition, x. The as-deposited films are n-type but converts to p-type after air annealing. Spectral response measurements gave band gap values that change with Hg content in the deposit. Band gap values ranging from 1.1 eV to 1.45 eV have been estimated. Photoelectrochemical solar cells using polysulphide electrolyte have been fabricated which gave an open-circuit photovoltage and short-circuit photocurrent, respectively, as 325 mV and 5.5 mA/cm2under 60 mW/cm2intensity of illumination.