PHOTOLUMINESCENCE AND RAMAN STUDY OF POROUS SIGE
PHOTOLUMINESCENCE AND RAMAN STUDY OF POROUS SIGE
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DOI：
10.1063/1.362606
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发表时间：
1996-06
影响因子：
3.2
通讯作者：
M. Schoisswohl;M. Rosenbauer;J. Cantin;S. Lebib;H. Bardeleben;J. Fave;J. Cernogora;G. Amato;A. Rossi
中科院分区：
文献类型：
--
作者：
M. Schoisswohl;M. Rosenbauer;J. Cantin;S. Lebib;H. Bardeleben;J. Fave;J. Cernogora;G. Amato;A. Rossi
本文研究了用阳极腐蚀法制备的初始Ge含量为5%和20%的多孔SiGe层在不同温度下的可见光和红外光致发光带。在室温下的光致发光光谱是由一个强烈的红色光致发光带中心在1.8 eV的占主导地位。还观察到较弱的蓝色光致发光带，这在低温下变得更加重要。拉曼测量表明，在我们的多孔SiGe层中仅存在低程度的限制。蓝绿色发光的发生似乎起源于晶体多孔结构中的氧包裹体。在多孔层上的红外光致发光光谱表明，从多孔Si已知的宽红外波段在多孔SiGe层中缺失，但是观察到通过多孔层的晶体结构中的缺陷的转变。
The photoluminescence bands in the visible and in the infrared of porous SiGe layers with initial Ge contents of 5% and 20%, prepared by anodical etching, are investigated at different temperatures. At room temperature the photoluminescence spectra are dominated by an intense red photoluminescence band centered at 1.8 eV. A weaker blue photoluminescence band is also observed which becomes more important at low temperatures. Raman measurements indicate only a low degree of confinement in our porous SiGe layers. The occurrence of blue–green luminescence seems to originate from the oxygen inclusions in the crystalline porous structure. Infrared photoluminescence spectroscopy on the porous layer shows that the broad infrared band known from porous Si is missing in the porous SiGe layers, but transitions via defects in the crystalline structure of the porous layers are observed.