A micromachined double-dipole antenna for 122 – 140 GHz applications based on a SiGe BiCMOS technology
A micromachined double-dipole antenna for 122 – 140 GHz applications based on a SiGe BiCMOS technology
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基于 SiGe BiCMOS 技术的微机械双偶极天线，适用于 122 – 140 GHz 应用
DOI：
10.1109/mwsym.2012.6258421
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
J. Scheytt
中科院分区：
文献类型：
--
作者：
Ruoyu Wang;Yaoming Sun;M. Kaynak;S. Beer;J. Borngraber;J. Scheytt
采用微机械加工技术，设计了一种基于标准SiGe BiCMOS工艺的片上双偶极子天线。它能够将毫米波收发机和天线完全集成到一个芯片中。在仿真中进行了参数研究，揭示了关键设计参数对辐射效率和方向性的影响。制作了样机并进行了测量，验证了设计的正确性。在130 GHz处测得峰值增益为8.4dBI，模拟效率为60%。3分贝增益带宽为122-140 GHz。
This paper presents an on-chip double-dipole antenna by applying micromachining techniques based on a standard SiGe BiCMOS process. It enables the fully integration of millimeter-wave transceiver and antenna into a single chip. A parametric study has been made in simulation which reveals the influence of the key design parameters over the radiation efficiency and directivity. A prototype has been fabricated and measured to verify the design. The measured peak gain is 8.4 dBi at 130 GHz with a simulated efficiency of 60 %. The 3-dB gain bandwidth is 122 – 140 GHz.