Evaluation of write error rate for voltage-driven dynamic magnetization switching in magnetic tunnel junctions with perpendicular magnetization
Evaluation of write error rate for voltage-driven dynamic magnetization switching in magnetic tunnel junctions with perpendicular magnetization
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DOI：
10.7567/apex.9.013001
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发表时间：
2016-01-01
影响因子：
2.3
通讯作者：
Suzuki, Yoshishige
中科院分区：
文献类型：
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作者：
Shiota, Yoichi;Nozaki, Takayuki;Suzuki, Yoshishige
研究了垂直磁化磁隧道结中电压驱动动态开关的写错误率(WER)。我们观察到了开关概率随脉冲电压持续时间的明显振荡行为，这揭示了在电压作用下磁化强度的进动。我们实验证明，在对应于半个进动周期(类似于1 ns)的脉冲宽度下，WER低至4×10(-3)。实验结果与基于宏观自旋模型的模拟结果的比较表明，超低WER(
We investigated the write error rate (WER) for voltage-driven dynamic switching in magnetic tunnel junctions with perpendicular magnetization. We observed a clear oscillatory behavior of the switching probability with respect to the duration of pulse voltage, which reveals the precessional motion of magnetization during voltage application. We experimentally demonstrated WER as low as 4 x 10(-3) at the pulse duration corresponding to a half precession period (similar to 1 ns). The comparison between the results of the experiment and simulation based on a macrospin model shows a possibility of ultralow WER (