Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO
Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO
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DOI：
10.1103/physrevb.79.035203
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发表时间：
2009-01-01
影响因子：
3.7
通讯作者：
McConville, C. F.
中科院分区：
文献类型：
--
作者：
King, P. D. C.;Veal, T. D.;McConville, C. F.
与传统半导体相比，天然缺陷、氢杂质和表面态都是n型CdO的供体。使用该模型系统，半导体中的缺陷、掺杂剂和表面态的电学行为由一个单一的能级，即电荷中性能级统一，从而对当前材料有了更深入的了解，并允许在新的化合物半导体中获得所需的定制电子特性的带结构工程方案。
In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in n-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.