Flexible position sensitive photodetectors based on a-Si:H heterostructures
Flexible position sensitive photodetectors based on a-Si:H heterostructures
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基于a-Si:H异质结构的灵活位置敏感光电探测器
DOI：
10.1016/j.sna.2004.01.065
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
R. Martins
中科院分区：
文献类型：
--
作者：
E. Fortunato;L. Pereira;H. Águas;I. Ferreira;R. Martins
本工作描述了一种改进型大面积（5 mm ×80 mm，有效长度为70 mm）柔性位置敏感探测器的制造和表征，该探测器沉积在聚合物基底（聚酰亚胺-Kapton ®VN）上。该传感器基于a-Si：H/ZnO：Al异质结结构，通过光谱响应、光电流与光强的关系以及位置检测等测试手段对传感器进行了表征。基于该异质结构的一维位置灵敏探测器的实验结果表明，在500 nm处的最大光谱响应为0.12A/W，在70 mm长度上的非线性度为±10%。由于聚合物和非晶硅膜表现出不同的热系数，所产生的传感器呈现出比在玻璃基板上产生的传感器更高的非线性。为了证明这一行为，它是测量的缺陷密度获得的恒定光电流方法沉积在聚合物基板弯曲不同的曲率半径的非晶硅。
This work describes the fabrication and characterization of an improved version of large area (5 mm ×80 mm with an active length of 70mm) flexible position sensitive detectors deposited onto polymeric substrates (polyimide–Kapton®VN). The new configuration presented by the sensor is based on a heterostructure of a-Si:H/ZnO:Al. The sensors were characterized by spectral response, photocurrent dependence as a function of light intensity and position detection measurements. The set of data obtained on one-dimensional position sensitive detectors based on the heterostructure show excellent performances with a maximum spectral response of 0.12A/W at 500nm and a non-linearity of ±10% over 70mm length. The produced sensors present a non-linearity higher than those ones produced on glass substrates, due to the different thermal coefficients exhibited by the polymer and the amorphous silicon film. In order to prove this behaviour, it was measured the defect density obtained by the constant photocurrent method on amorphous silicon deposited on polymeric substrates bended with different radius of curvature.