Over 15% efficient wide-band-gap Cu(ln,Ga)S2 solar cell: Suppressing bulk and interface recombination through composition engineering
Over 15% efficient wide-band-gap Cu(ln,Ga)S2 solar cell: Suppressing bulk and interface recombination through composition engineering
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DOI：
10.1016/j.joule.2021.05.004
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发表时间：
2021-07-21
期刊：
影响因子：
39.8
通讯作者：
Siebentritt, Susanne
中科院分区：
文献类型：
--
作者：
Shukla, Sudhanshu;Sood, Mohit;Siebentritt, Susanne
Cu(ln,Ga)S-2 的进展仍然受到严重限制，主要是由于体相和界面处的光电压 (V-oc) 损失。在这里，通过光致发光、阴极发光、电学测量和从头计算建模的结合，我们解决了体积和界面损耗，以改善类似于 1.6-eV 带隙 (E-g) Cu(ln,Ga)S-2 的吸收器的光电质量在降低 [Cu]/[Ga+In] (CGI) 比率时得到改善，如深层缺陷的抑制、更高的准费米能级分裂所表明的那样(QFLS)、改进的载流子寿命和更高的 V-oc 通过比较各种本征缺陷的形成能，我们将反位 Cu-In/Cu-Ga 确定为主要的性能限制深度缺陷。 Cupoor 器件中的 Zn(O,S) 缓冲层可抑制界面复合，从而导致复合活化能等于 E-g。我们证明，在不含 H2S、不含 Cd 和 KCN 的工艺中，V-oc 为 902 mV，效率为 15.2%。
The progress of Cu(ln,Ga)S-2 remains significantly limited mainly due to photovoltage (V-oc) losses in the bulk and at the interfaces. Here, via a combination of photoluminescence, cathodoluminescence, electrical measurements, and ab initio modeling, we address the bulk and interface losses to improve similar to 1.6-eV-band-gap (E-g) Cu(ln,Ga)S-2 The optoelectronic quality of the absorber improves upon reducing the [Cu]/[Ga+In] (CGI) ratio, as manifested by the suppression of deep defects, higher quasi-Fermi level splitting (QFLS), improved charge-carrier lifetime, and higher V-oc We identify antisite Cu-In/Cu-Ga as a major performance-limiting deep defect by comparing the formation energies of various intrinsic defects. Interface recombination is suppressed using a Zn(O,S) buffer layer in Cupoor devices, which leads to the activation energy of recombination equal to the E-g. We demonstrate an efficiency of 15.2% with V-oc of 902 mV from a H2S-free, Cd-free, and KCN-free process.