Perpendicular Anisotropic Magnetoresistance Induced by Surface Spin-Orbit Scattering in a MgO/Fe/Cu Heterostructure
Perpendicular Anisotropic Magnetoresistance Induced by Surface Spin-Orbit Scattering in a MgO/Fe/Cu Heterostructure
复制标题
MgO/Fe/Cu 异质结构中表面自旋轨道散射引起的垂直各向异性磁阻
DOI：
10.1109/lmag.2017.2650147
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发表时间：
2017
影响因子：
1.2
通讯作者：
Yu Guang Hua
中科院分区：
文献类型：
--
作者：
Liu Qianqian;Yang Guang;Liu Yi Wei;Cao Yi;Zhang Jing Yan;Li Ming Hua;Ding Lei;Wang Dong Wei;Zhan Qian;Feng Chun;Pan Yue Dou;Yu Guang Hua
在MgO/Fe/Cu异质结构中获得了大的垂直各向异性磁阻（AMR），最大AMR比为0.59%。垂直 AMR 大约与 2.5 nm 以上的 Fe 层厚度成反比。它可以通过增强结构不对称性来增加，这意味着界面效应主要源自 MgO/Fe/Cu 异质结构中的界面 Rashba 自旋轨道散射。垂直 AMR 与温度相关。
A large perpendicular anisotropic magnetoresistance (AMR) is obtained in a MgO/Fe/Cu heterostructure, with a maximum AMR ratio of 0.59%. The perpendicular AMR is approximately inversely dependent on the thickness of the Fe layer above 2.5 nm. It can be increased by enhanced structural asymmetry, which implies an interface effect mainly derived from interfacial Rashba spin-orbit scattering in the MgO/Fe/Cu heterostructure. The perpendicular AMR is temperature dependent.